Forming a frequency control component with a target effective capacitance range

ABSTRACT

A voltage controlled oscillator comprises a negative resistance, a first inductor, a fixed capacitor, and a frequency control component. The frequency control component comprises at least one varactor and at least a second inductor connected in series with the at least one varactor. A magnitude of an inductance of the second inductor is selected such that the frequency control component has an effective capacitance range larger than a capacitance range of the at least one varactor.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Continuation of U.S. patent application Ser. No.14/731,593, filed on Jun. 5, 2015 and issued on Jul. 26, 2016 as U.S.Pat. No. 9,401,696, which claims the benefit of U.S. Provisional PatentApplication Ser. No. 62/101,541, filed on Jan. 9, 2015, the disclosureof which is fully incorporated by reference herein. The disclosures ofthese applications are incorporated by reference herein.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH

This invention was made with Government support under Contract No.:HR0011-12-C-0087 awarded by the Defense Advanced Research ProjectsAgency (DARPA). The Government has certain rights in this invention.

BACKGROUND

Reconfigurable radios are used for various applications. Somereconfigurable radios use oscillators, which often include an inductor,a capacitor, a negative resistance element to maintain oscillation and avariable capacitor or varactor for controlling the frequency of theoscillator. An oscillator controlled with a digital control word isreferred to as a digitally controlled oscillator (DCO). An oscillatorcontrolled with an analog control voltage is referred to as a voltagecontrolled oscillator (VCO).

SUMMARY

Embodiments of the invention provide techniques for boosting acapacitance ratio of a varactor.

In one embodiment, a method comprises selecting a target effectivemaximum to minimum capacitance range for a frequency control componentcomprising at least one varactor, the target effective capacitance rangefor the frequency control component being larger than a capacitancerange of the at least one varactor, forming the frequency controlcomponent by providing at least one inductor in series with the at leastone varactor, and selecting a magnitude of an inductance of the at leastone inductor such that the frequency control component has the targeteffective capacitance range.

In another embodiment, an apparatus comprises a frequency controlcomponent comprising at least one varactor and at least one inductorconnected in series with the at least one varactor. A magnitude of aninductance of the at least one inductor is selected such that thefrequency control component has an effective capacitance range largerthan a capacitance range of the at least one varactor.

In another embodiment, a voltage controlled oscillator comprises anegative resistance, a first inductor, a fixed capacitor and a frequencycontrol component. The frequency control component comprises at leastone varactor and at least a second inductor connected in series with theat least one varactor. A magnitude of an inductance of the secondinductor is selected such that the frequency control component has aneffective capacitance range larger than a capacitance range of the atleast one varactor.

These and other features, objects and advantages of the presentinvention will become apparent from the following detailed descriptionof illustrative embodiments thereof, which is to be read in connectionwith the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an analog phase-locked loop (PLL) architecture, accordingto an embodiment of the invention.

FIG. 2 shows a digital PLL architecture, according to an embodiment ofthe invention.

FIG. 3 shows a hybrid PLL architecture, according to an embodiment ofthe invention.

FIG. 4 shows a varactor using a series inductance to boost capacitanceratio, according to an embodiment of the invention.

FIG. 5 shows an LC tank using a series inductance to boost a capacitanceratio of a varactor, according to an embodiment of the invention.

FIG. 6 shows a switched capacitor circuit, according to an embodiment ofthe invention.

FIG. 7 shows a plot of capacitance ratio enhancement and Q factor,according to an embodiment of the invention.

FIG. 8 shows an increased tuning range using capacitance enhancement,according to an embodiment of the invention.

FIG. 9 shows a VCO using a series inductance to boost a capacitanceratio of a varactor, according to an embodiment of the invention.

FIG. 10 shows transconductance distribution in resonators includingdistributed capacitor networks, according to an embodiment of theinvention.

FIG. 11 shows a full octave VCO, according to an embodiment of theinvention.

FIG. 12 shows a die micrograph of the full octave VCO of FIG. 11,according to an embodiment of the invention.

FIG. 13 shows binary weighted capacitor usage across a frequency range,according to an embodiment of the invention.

FIG. 14 shows phase noise variation across capacitor bands, according toan embodiment of the invention.

FIG. 15 shows a tuning profile of a full octave VCO, according to anembodiment of the invention.

FIG. 16 shows a plot of phase noise across a tuning range of a fulloctave VCO, according to an embodiment of the invention.

FIG. 17 shows a plot of phase noise versus offset frequency for VCO anddivider outputs, according to an embodiment of the invention.

FIG. 18 shows a VCO having a frequency control component, according toan embodiment of the invention.

FIG. 19 shows a filter having a frequency control component, accordingto an embodiment of the invention.

FIG. 20 shows a reconfigurable radio system having a frequency controlcomponent, according to an embodiment of the invention.

FIG. 21 shows an integrated circuit having a frequency controlcomponent, according to an embodiment of the invention.

FIG. 22 shows a process for boosting a capacitance range of a varactor,according to an embodiment of the invention.

DETAILED DESCRIPTION

Illustrative embodiments of the invention will be described herein inthe context of reconfigurable radio systems including an oscillator.However, it is to be understood that principles of the invention are notlimited solely to the specific architectures described herein. Forexample, the inventive techniques can be used in a number of other typesof circuits including microprocessors, mm-wave radios, serial links,resonators, filters, etc.

In order to design reconfigurable radios that cover a wide tuning rangeand meet a variety of specifications, it is desirable to have awide-tuning VCO with good phase noise performance and low powerconsumption across the entire target tuning range. Ring oscillators canachieve a very wide tuning range, but they typically have poor phasenoise and, when operated at near-mm-wave frequencies, demand significantpower. In addition to a wide tuning range VCO, a goal of flexiblereconfigurability can be achieved by embedding a VCO within afractional-N frequency synthesizer that can lock to any desiredfrequency in the tuning range of the VCO using any given referencefrequency within a reasonable range.

Achieving a large tuning range at high frequencies is challenging in LCoscillators. Wide-tuning tank-based VCOs at the sib-10 GHz frequencyrange may be achieved using a variety of techniques, including usingcapacitive tuning for frequencies below 2 GHz and inductor tuning inswitched inductors and magnetically tuned VCOs below 10 GHz. Wide-tuningrange solutions which use large capacitor arrays and multi-modeinductors and transforms effectively produce higher order tanks that aresusceptible to parasitic modes of oscillation. Multi-tank and/ormulti-VCO arrangements may be used to cover an entire tuning range, butat the expense of area and complexity. In some embodiments, afull-octave VCO having a frequency range above 15 GHz is achievedovercoming one or more of the above-noted drawbacks.

In some embodiments, techniques are used to increase an effectivecapacitance ratio of a varactor, thereby enabling a wider tuning rangeusing capacitive tuning. In some embodiments, series interconnectinductance is used to enhance the capacitance and effective capacitanceratio of a varactor, enabling the creation of a large tuning rangeoscillator at high frequencies. A tradeoff between the quality factor ofthe varactor and the tuning range may be optimized in some embodimentsto achieve good phase noise performance across the tuning range.Further, in some embodiments transconductance distribution techniquesare utilized to avoid parasitic oscillations arising from a resultinghigher order tank to achieve high start-up gain for a desiredoscillation mode and low gain for one or more parasitic modes.

FIG. 1 shows an analog PLL 100, which may be used in a synthesizer orother reconfigurable radio system. The analog PLL 100 includes a phasedetector 102, analog control 104, VCO 106, driver 108 and frequencydivider 110. The phase detector 102 detects a phase difference between areference signal, denoted Ref in FIG. 1 and the output of the frequencydivider 110. The frequency divider 110 divides the output frequency ofthe VCO 106 to provide frequency scaling. The output of the phasedetector 102 is input to analog control 104, which controls the VCO 106so as to match the divided output of the VCO 106 with the referencesignal Ref.

FIG. 2 shows a digital PLL 200, including a phase detector 202, digitalcontrol 204, DCO 206, driver 208 and frequency divider 210, whichfunction in a manner similar to that described above with respect to thephase detector 102, digital control 104, VCO 106, driver 108 andfrequency divider 110 of the analog PLL 100.

FIG. 3 shows a hybrid PLL 300. The hybrid PLL 300 includes phasedetector 302, analog control 303, digital control 304, VCO/DCO 306,driver 308 and frequency divider 310. The phase detector 302 detects aphase difference between the output of the frequency divider 310 and thereference signal Ref. The phase detector 302 in the hybrid PLL 300provides outputs to both analog control 303 and digital control 304.Analog control 303 controls the VCO portion of VCO/DCO 306 while thedigital control 304 controls the DCO portion of VCO/DCO 306. The hybridPLL 300 may be an integer-N hybrid PLL or a fractional-N hybrid PLL. Infractional-N mode a noise cancellation scheme removes the errorintroduced by a delta-sigma divider. The hybrid PLL 300 may beimplemented using a 32 nm silicon on insulator (SOI) complementarymetal-oxide-semiconductor (CMOS) process.

In the analog PLL 100, digital PLL 200 and hybrid PLL 300, one or morethe analog/digital controls and VCO/DCO may include a frequency controlcomponent using a series inductor to enhance the capacitance andeffective capacitance ratio of at least one varactor. Various examplesof the frequency control components will be described in further detailbelow.

The analog PLL 100, digital PLL 200 and hybrid PLL 300 may each featurefull-octave tuning cross coupled VCO, DCO or VCO/DCO with a continuoustuning range. Frequencies below the VCO, DCO or VCO/DCO outputfrequencies can be obtained using frequency dividers. In someembodiments, the tuning range is between approximately 10.5 GHz and 24GHz. The divider 108 in analog PLL 100, divider 208 in digital PLL 200and divider 308 in hybrid PLL 300 may feature programmable div/2 todiv/16 output dividers providing outputs down to the sub-1 GHz range insome embodiments. A single capacitively tuned LC VCO, DCO or VCO/DCO maybe used to achieve the full-octave tuning range.

In some embodiments, it is desirable to enable synthesis of anyfrequency between 1 GHz and 24 GHz using a single VCO and outputdividers. To achieve this, the VCO must support more than one octave oftuning range natively. Once this range is achieved, output division canbe used to reach frequencies below the lowest direct frequency to whichthe VCO can be tuned. However, obtaining an octave of tuning range in anLC tank oscillator is challenging, primarily because parasiticcapacitances form a significant component of tank capacitance. This istrue especially in advanced technology processes, placing significantdemands on varactor capacitance ratios using traditional techniques. Inorder to achieve the target tuning range, capacitance enhancementtechniques are used in some embodiments. The capacitance enhancementtechniques may leverage interconnect inductance of a capacitor array toachieve improvements. As described above, in some embodimentstransconductance distribution techniques may be utilized to avoidparasitic oscillations resulting from the higher order tank.

FIG. 4 shows a structure 400 including a varactor with a capacitanceratio C_(max)/C_(min) and an inductor L_(ser) placed in series with thevaractor. FIG. 5 shows a structure 500 similarly including a varactorand an inductor L_(ser) placed in series with the varactor. Thestructure 500 further includes a fixed capacitor having a fixedcapacitance C_(fixed). When inductor L_(ser) is placed in series withthe variable capacitor as shown in FIG. 4, the capacitance of thestructure 400 is modified according to the following equation

$\begin{matrix}{\frac{1}{C_{{var},{eff}}} = {\frac{1}{C_{var}} - {\omega_{osc}^{2}L_{ser}}}} & (1)\end{matrix}$where C_(var) is the capacitance of the variable capacitor, C_(var,eff)is the effective capacitance of the variable capacitance, and ω_(osc) isthe frequency of oscillation, where

$\omega_{osc} < {\frac{1}{\sqrt{L_{ser}C_{var}}}.}$The effective capacitance of the varactor in structure 500 is similarlymodified.

The new ratio of capacitances is given as:

$\begin{matrix}{\frac{C_{\max,{eff}}}{C_{\min,{eff}}} = \frac{C_{\max}\left( {1 - {C_{\min}\omega_{osc}^{2}L_{ser}}} \right)}{C_{\min}\left( {1 - {C_{\max}\omega_{osc}^{2}L_{ser}}} \right)}} & (2)\end{matrix}$where C_(max) and C_(min) denote the maximum and minimum capacitances ofthe variable capacitor and C_(max,eff) and C_(min,eff) denote theeffective maximum and effective minimum capacitances of the structure400. Since C_(min)<C_(max), the new capacitance ratio is larger than theoriginal ratio, i.e.,

$\frac{C_{\max,{eff}}}{C_{\min,{eff}}} > {\frac{C_{\max}}{C_{\min}}.}$It is assumed, at this point, that ω_(osc) does not change significantlycompared to the total tuning range. This varactor ratio boostingtechnique does not have any significant area penalty, and can be mademore pronounced by choosing a value of L_(ser) such that C_(max)ω²_(osc)L_(ser) approaches unity.

The series inductor L_(ser) may be implemented as a coil inductor, usinginterconnect wiring, using a tunable or variable inductor, using atransmission line, or using a tunable or variable transmission line. Inembodiments where L_(ser) is implemented using interconnect wiring thevalue of the inductance of L_(ser) may be chosen by adjusting the lengthand/or width of the interconnect wiring. The value of the inductance ofL_(ser) may additionally or alternatively be chosen by varying adistance between a given interconnect wiring and one or more otherinterconnect wirings carrying a current having the same or oppositepolarity. If the given interconnect wiring and the other interconnectwiring carry current having the same polarity, the interconnectinductance increases due to the mutual inductance effect. If the giveninterconnect wiring and the other interconnect wiring carry current havethe opposite polarity, the interconnect inductance decreases.

Moreover, some embodiments may be designed having a net improvement invaractor Q while also achieving varactor enhancement. For example, inthe structure 500, the varactor may be implemented as a switchedcapacitor. FIG. 6 shows a structure 600, where the varactor isimplemented as a switched capacitor. The structure 600 includes varactorC_(var) connected in series with inductance L_(ser). The structure 600further includes a switch, a fixed capacitor C_(fixed), a tank inductorL_(tank) and a number of parasitic capacitances denotedC_(par1)-C_(par4). The switch resistance is assumed to dominate overinductor and metal-oxide-metal capacitance (MOMCAP) parasiticresistances.

The reduction in Q of the varactor can be compensated for by using alarger switch in the structure 600. In some embodiments, the Q of thevaractor may be improved by using the larger switch. In an advanced 32nm CMOS SOI technology, the C_(max)/C_(min) ratio of the MOMCAPs variesbetween <2:1 for small capacitors to about 10:1 for large capacitors.Small capacitors in this advanced technology may have, by way ofexample, capacitances of approximately 10 femto farads (fF), while largecapacitors in this advanced technology may have, by way of example,capacitances of approximately 200 fF. Given the small capacitors used athigh frequencies to keep analog tuning and resulting VCO gain low, it isdifficult or impossible to achieve a sufficiently high C_(max)/C_(min)ratio, especially after the addition of a switch. Note that for anoctave of tuning, an overall (C_(max)+C_(fixed))/(C_(min)+C_(fixed))>4is needed.

FIG. 7 shows a plot 700 of capacitance ratio enhancement and Q factorfor the structure 600. The C_(max)/C_(min) of the structure 600 with anideal switch and L_(ser)=0 is set as 10:1. The size of a real switch inthe 32 nm CMOS SOI technology is varied to evaluate the Q factor versusC_(max)/C_(min) tradeoff. As shown in the plot 700, for a given Qfactor, the capacitance enhancement technique (where L_(ser)>0) achievesa much higher tuning range. Without the use of the series inductor, apeak C_(max)/C_(min) ratio of (6.1):1 is obtained. For this ratio, the Qfactor is 2.8. In the presence of series inductance, the C_(max)/C_(min)ratio improves to about (9.5):1, at the cost of Q. However, as shown inthe plot 700, for the same Q factor, a C_(max)/C_(min) ratio of (9.3):1is still obtained by increasing the size of the switch. The lower Qfactor is offset by using a larger switch, while still maintaining anoverall advantage.

The resonant frequencies for a tank with and without varactorenhancement are plotted in FIG. 8. FIG. 8 shows a plot 800 for a firststructure 801 without a series inductance L_(ser) and a second structurewith the series inductance L_(ser). As seen from the plot, the seriesinductance L_(ser) improves the maximum to minimum frequency ratio,f_(max)/f_(min), by about 50%. Thus, as shown, the capacitanceenhancement technique allows for a full octave tuning range. In plot800, the fixed capacitance C_(fixed) is assumed to be approximatelyequal to the minimum varactor capacitance, and a tank inductor value of70 pH is assumed.

The introduction of the series inductor that enables the capacitanceenhancement and C_(max)/C_(min) ratio versus Q tradeoff also results inmaking the LC VCO a higher order oscillator. FIG. 9 shows an LC VCO 900,including a tank inductor L_(tank), fixed capacitor C_(fixed), varactorC_(var), series inductor L_(ser) and a negative resistance G_(m) cell902. As a result, it is possible for the LC VCO 900 to oscillate inparasitic modes for certain switching combinations. The parasitic modesof oscillation depend on the placement of the negative resistance. Ifthe negative resistance is placed in a lumped location within the LC VCO900, both the desired and the parasitic modes of oscillation “see” theentire transconductance.

This effect is shown in FIG. 10, which shows resonators 1001 and 1002.The resonators 1001 and 1002 are LC circuits, including respective tankinductors and respective sets of switched capacitors. Switches SW₁, SW₂and SW₃ are used to switch in respective sets of the capacitors. Asshown, varactor boosting series inductors are connected in series withrespective ones of the switched capacitors, allowing for enhancement ofthe C_(max)/C_(min) ratio for the switched capacitors. The varactorboosting series inductors, however, contribute to parasitic modes ofoscillation. The parasitic modes involve the combinations of the seriesinterconnect inductance and the varactors. Above the self-resonancefrequency of these combinations, the effective inductance formed canresonate with the tank capacitance. If the negative resistance elementis placed in a lumped location, both the desired and the parasitic modesof oscillation will “see” the entire transconductance. This effect isshown in resonator 1001, which has G_(m) cell 1010 in a lumped location,resulting in parasitic modes of oscillation PM₁, PM₂ and PM₃.

Different placement of the negative resistance with respect to the tankand the capacitor array can result in the creation of different,multiple potential, parasitic modes of oscillation. In any of thesemodes, the series combination of the parasitic inductance and thecapacitance can form an equivalent inductor that can resonate with othercapacitors in the tank. The distribution of the transconductance is asomewhat free layout parameter that can be exploited to support thedesired mode and suppress undesired oscillation modes. This isillustrated in resonator 1002, which has multiple G_(m) cells 1020, 1022and 1024 distributed throughout the capacitor network of the resonator1002. This placement limits the ability of the G_(m) cells 1020, 1022and 1024 to support parasitic resonance modes. As shown in FIG. 10, theresonator 1002 has parasitic modes of oscillation RM₁, RM₂, RM₃, RM₄ andRM₅, which leverage only a small portion of the distributedtransconductance. Moreover, the parasitic modes RM₁, RM₂, RM₃, RM₄ andRM₅ are pushed to higher frequencies where the transconductance of theGm cells 1020, 1022 and 1024 are lower. In this way, the placementcauses the parasitic oscillation modes to be heavily damped.

FIG. 11 shows a circuit diagram of a full-octave VCO 1100. Thefull-octave VCO 1100 uses a 7-bit custom-weighted switched capacitorsand analog varactors 1102 for tuning. The full-octave VCO 1100 also hastank inductor L_(ind) and resistive DAC 1104. In some embodiments, theswitched capacitors may be constructed using a series combination ofMOMCAPs and NMOS switches. FIG. 12 shows a die micrograph 1200 of animplementation of the full-octave VCO 1100 in a PLL 1201 using a 32 nmCMOS SOI process. FIG. 12 also shows a detailed view 1202 of animplementation of the full-octave VCO 1100. The tank inductor L_(ind)may be, by way of example, a 75 pH inductor. The switched capacitorarray in element 1102 and the inductor L_(ind) occupy similar areas asshown in FIG. 12. As shown, the full-octave VCO 1100 occupies only 220μm×90 μm=0.2 mm², while the PLL 1201 occupies 430 μm×400 μm=0.17 mm². Itshould be noted however, that the specific dimensions shown in FIG. 12are presented by way of example only, and embodiments are not limited tothe specific dimensions shown in FIG. 12. In addition, embodiments arenot limited to only 7-bit switched capacitor arrays. Instead, switchedcapacitor arrays of more or fewer than 7 bits may be used in otherembodiments.

Interconnect wiring used to connect to the capacitor array in element1102 is used for capacitance boosting, and as such the capacitiveboosting does not require additional area overhead. The values of theseries inductance formed using interconnect wiring, as described above,may be controlled in a number of ways including adjusting the lengthand/or width of the interconnect wiring and controlling mutualinductances by adjusting the distances between different interconnects.Given the frequency dependence of the capacitance, the capacitance andquality factor of the most significant bit (MSB) capacitors in element1102 are optimized for the frequencies at which they are used.

The G_(m) cells shown in FIG. 12 may be distributed in a manner similarto that described above with respect to FIG. 10. In some embodiments,the distribution of the G_(m) cells may be achieved by splitting alumped G_(m) cell into two pieces and distributing these pieces acrossthe capacitor array in element 1102.

In some embodiments, the trade-off between phase noise, oscillationfrequency and tuning range may be exploited in order to achieve a fairlyuniform phase noise across the tuning range of a VCO such as thefull-octave VCO 1100. In some embodiments, varactor Q and phase noiseperformance may improve at lower frequencies. As such, it is possible tosacrifice some of this Q in favor of tuning range without sacrificingphase noise to thereby optimize the varactor array in a frequency awarefashion. To this end, varactors that are utilized only at the lowerfrequencies (the MSB capacitors in the binary weighted array) may bedesigned with relatively smaller switches and more aggressivecapacitance boosting so as to maintain a substantially constant phasenoise across the tuning range.

The switched capacitors in element 1102 may utilize capacitanceenhancement techniques described herein to increase the C_(max)/C_(min)ratio of various ones of the switched capacitors. Table 1 below showsthe actual and effective normalized capacitances per control bit. InTable 1, the capacitances are normalized to the value of the leastsignificant bit (LSB) switched capacitance (the 1 in the leftmostnumerical column in the table). The normalized switch sizes for eachswitched capacitor are also shown.

TABLE 1 Actual Capacitance 1 1.7 2.7 5.1 9.6 17.1 24.4 Σ = 62 UnitsEffective Capacitance 1 2 4 8 16 28 41 Σ = 100 Units Switch Units 1 1 23 5 8 10 Σ = 30As seen in Table 1, the effective capacitance is not binary weighted forthe two MSBs. This is done in some embodiments in order to reduce theparasitic capacitance contribution from these MSB switch capacitorswhile still achieving an octave of tuning range. FIG. 13 shows a plot1300 of the frequency usage of the different capacitors in the 7-bitswitched capacitor array of the full-octave VCO 1100. Note that, due tocapacitance boosting, only 62 units of capacitance are utilized toproduce 100 effective units of capacitance variation in the full-octaveVCO 1100. Moreover, the switches contribute only 30 units of parasiticcapacitance. In comparison, a binary weighted array with proportionalswitch sizing would use 100 units of both capacitance and switches, suchthat the combined parasitic capacitance would make it impossible toachieve an octave tuning range in this technology at the targetfrequencies.

It is important to note that the values shown in Table 1 are presentedby way of example, in other embodiments, different amounts ofcapacitance enhancement may be used in the 7-bit switched capacitorarray and varactor element 1102, including utilizing capacitanceenhancement for the two MSBs. Also, as discussed above, embodiments arenot limited solely to 7-bit switched capacitor arrays.

By controlling and optimizing the quality factor of the capacitances, asteady phase noise is achieved though the tuning range of thefull-octave VCO 1100. Specifically, the tradeoff between phase noise,frequency of oscillation and tuning range may be exploited as describedabove in some embodiments to achieve an optimal or desired performance.In some embodiments, the switch sizes are reduced for the MSB capacitorssince phase noise improves at lower frequencies.

FIG. 14 shows a plot 1400 illustrating phase noise variation acrosscapacitor bands. The phase noise versus capacitor Q optimization isobserved by plotting the phase noise across the 7-bit combinations ofthe full-octave VCO 1100. The simulated Q factor of the tank is scaledin accordance with Leeson's model assuming a fixed signal power andfixed F factor across the tuning range with a 10 MHz offset. The phasenoise based on tank Q factor is shown as a dotted line in the plot 1400.This can be compared to the simulated phase noise shown as the dashedline in the plot 1400. The plot 1400 also shows measured phase noise asa solid line. As seen in the plot 1400, the phase noise variation overthe tuning range is primarily determined by the Q factor variation.Moreover, the optimization in the capacitor Q factor enables a steady,sawtooth phase noise profile across frequency, which provides good phasenoise performance at the highest frequencies and trades off expectedphase noise improvements at the lower frequencies to achieve a widertuning range.

The tuning curves of the full-octave VCO 1100, both measurement andsimulation, for different capacitor bits are shown in plot 1500 in FIG.15. As shown, the VCO 1100 achieves a tuning range of about 10.5 GHz toabout 24 GHz, resulting in more than an octave of tuning range with asignificant margin for process, voltage and temperature (PVT)variations. In other embodiments, a VCO, resonator, filter or other typeof reconfigurable radio may achieve different tuning ranges usingcapacitance enhancement techniques as described herein.

FIG. 16 shows a plot 1600 of the phase noise across the tuning range forthe full-octave VCO 1100. As the quality factor of the largercapacitors, e.g., those with series inductor capacitance boosting, islower, the phase noise drops when the larger capacitors are switched in.

FIG. 17 shows a plot 1700 of the phase noise profiles versus offsetfrequencies for the fundamental output of the full-octave VCO 1100,along with various divided outputs. The plot 1700 shows the expected 6dB phase noise improvement for every frequency division by 2. The phasenoise varies between −119 dBc/Hz and −128 dBc/Hz across the tuningrange. The power dissipation for the full-octave VCO 1100 is less than20 mW across the tuning range.

As described above with respect to FIG. 12, in some embodiments thefull-octave VCO 1100 may be implemented requiring only 0.02 mm² area,while achieving a 78% tuning range, which is more than an octave (67%)of tuning range. In some embodiments, divide by 2 circuits may be usedto achieve frequencies down to 660 MHz. Distributed transconductanceapproaches may be utilized to avoid parasitic oscillations.

While various embodiments have been described with respect to thefull-octave VCO 1100, the above-described techniques are not limitedsolely to use with a full-octave VCO. Instead, the above-describedtechniques may be more generally utilized in a frequency controlcomponent comprising at least one varactor and at least one inductorconnected in series with the at least one varactor, wherein a magnitudeof an inductance of the at least one inductor is selected such that thefrequency control component has an effective capacitance range largerthan a capacitance range of the at least one varactor. In someembodiments, the at least one inductor may be implemented usinginterconnect wiring having at least one of a width, a length and adistance from another interconnect wiring selected such that thefrequency control component has the effective capacitance range. Inother embodiments, the at least one inductor may be implemented using acoil inductor, a variable or tunable inductor, a transmission line, or avariable or tunable transmission line. The at least one varactor may beimplemented as an analog varactor, a switched capacitor or an array ornetwork of switched capacitors and/or analog varactors having inductorsconnected in series with respective ones of one or more of the switchedcapacitors and/or analog varactors. In some embodiments, a plurality ofnegative resistance elements spatially distributed within respectivedistances of the plurality of switched capacitors. Such a frequencycontrol component may be implemented in various types of devices. By wayof example, FIGS. 18-20 show a VCO 1800, filter 1900 and reconfigurableradio system 2000 having respective frequency control components 1802,1902 and 2002, respectively, which utilize the capacitance enhancementtechniques described herein. The filter 1900 may be an active or passivefilter.

Various structures described above may be implanted in integratedcircuits. FIG. 21 shows an integrated circuit 2100 having a frequencycontrol component 2102. It is to be appreciated that, in an illustrativeintegrated circuit implementation, one or more integrated circuit diesare typically formed in a pattern on a surface of a wafer. Each such diemay include a device comprising circuitry as described herein, and mayinclude other structures or circuits. The dies are cut or diced from thewafer, then packaged as integrated circuits. One ordinarily skilled inthe art would know how to dice wafers and package dies to producepackaged integrated circuits. Integrated circuits, manufactured as aboveand/or in other ways, are considered part of this invention. It is to beunderstood that circuits in some embodiments can be formed acrossmultiple integrated circuits.

FIG. 22 shows a process 2200 for boosting a capacitance range of avaractor. The process 2200 includes selecting 2202 a target effectivecapacitance range for a frequency control component comprising at leastone varactor, the target effective capacitance range for the frequencycontrol component being larger than a capacitance range of the at leastone varactor. The frequency control components 1802, 1902, 2002 and2102, as well as the structure 400 and portions of the structures 500,600, 802, 900, 1001, 1002 and 1100 are example of frequency controlcomponents. The at least one varactor may be implemented as an analogvaractor, a switched capacitor or an array or network of switchedcapacitors and/or analog varactors having inductors connected in serieswith respective ones of one or more of the switched capacitors and/oranalog varactors.

The process 2200 continues with forming 2204 the frequency controlcomponent by providing at least one inductor in series with the at leastone varactor. In some embodiments, the at least one inductor may beimplemented using interconnect wiring coupled to the at least onevaractor or as an inductor coil. As described above, in some embodimentsthe at least one varactor may comprises an array of one or more switchedcapacitors and/or analog varactors. In such embodiments, the step 2204of forming the frequency control component may further include spatiallydistributing negative resistance elements within respective distances ofthe switched capacitors and/or analog varactors.

Process 2200 further includes selecting 2206 a magnitude of aninductance of the at least one inductor such that the frequency controlcomponent has the target effective capacitance range. As describedabove, in some embodiments the at least one inductor may be implementedas interconnect wiring connected to the at least one varactor. In suchembodiments, the step 2206 of selecting the magnitude of the inductanceof the at least one inductor may comprise adjusting at least one of alength and a width of the interconnect wiring. The step 2206 ofselecting the magnitude of the inductance of the at least one inductormay alternately or additionally include adjusting a distance between theinterconnect wiring and another interconnect wiring.

As described above, in some embodiments the at least one varactor maycomprise a switched capacitor. In such embodiments, the switchedcapacitor may be a semiconductor switch connected in series with acapacitor having a given quality factor. The process 2200 in theseembodiments may further include selecting a size of the semiconductorswitch to at least partially compensate for a reduction in the givenquality factor resulting from the effective capacitance range of thefrequency control component being larger than the capacitance range ofthe at least one varactor.

It will be appreciated and should be understood that the exemplaryembodiments of the invention described above can be implemented in anumber of different fashions. Given the teachings of the inventionprovided herein, one of ordinary skill in the related art will be ableto contemplate other implementations of the invention. Indeed, althoughillustrative embodiments of the present invention have been describedherein with reference to the accompanying drawings, it is to beunderstood that the invention is not limited to those preciseembodiments, and that various other changes and modifications may bemade by one skilled in the art without departing from the scope orspirit of the invention.

What is claimed is:
 1. A method of manufacturing a frequency controlcomponent, comprising: forming the frequency control component;providing at least one varactor in the frequency control component, theat least one varactor having an associated capacitance range; selectinga target effective maximum to minimum capacitance range for thefrequency control component, the target effective capacitance range forthe frequency control component being larger than the capacitance rangeof the at least one varactor; providing at least one inductor in serieswith the at least one varactor in the frequency control component;selecting a magnitude of an inductance of the at least one inductor suchthat the frequency control component has the target effectivecapacitance range; and connecting the at least one inductor in serieswith the at least one varactor such that the frequency control componenthas the target effective capacitance range; wherein selecting themagnitude of inductance of the at least one inductor is based on aquality factor of the at least one varactor.
 2. The method of claim 1,wherein the at least one inductor comprises interconnect wiring coupledto the at least one varactor.
 3. The method of claim 2, wherein theselecting the magnitude of the inductance of the at least one inductorfurther comprising adjusting at least one of a length and a width of theinterconnect wiring.
 4. The method of claim 2, wherein the selecting themagnitude of the inductance of the at least one inductor furthercomprising adjusting a distance between the interconnect wiring andanother interconnect wiring.
 5. The method of claim 1, wherein the atleast one inductor comprises an inductor coil.
 6. The method of claim 1,wherein the at least one inductor comprises a tunable inductor.
 7. Themethod of claim 1, wherein the at least one inductor comprises atransmission line.
 8. The method of claim 1, wherein the at least oneinductor comprises a tunable transmission line.
 9. The method of claim1, wherein the at least one varactor comprises an analog varactor. 10.The method of claim 1, wherein the at least one varactor comprises aplurality of switched capacitors and wherein the at least one inductorcomprises a plurality of inductors connected in series with respectiveones of the plurality of switched capacitors.
 11. The method of claim 1,wherein the at least one varactor comprises a switched capacitorcomprising a semiconductor switch connected in series with a capacitorhaving a given quality factor and further comprising selecting a size ofthe semiconductor switch to at least partially compensate for areduction in the given quality factor resulting from the effectivecapacitance range of the frequency control component being larger thanthe capacitance range of the at least one varactor.
 12. The method ofclaim 1, wherein: providing at least one varactor in the frequencycontrol component comprises providing two or more varactors in thefrequency control component; and providing at least one inductor inseries with the at least one varactor in the frequency control componentcomprises providing a first inductor connected in series with a firstone of the two or more varactors and providing a second inductorconnected in series with a second one of the two or more varactors. 13.The method of claim 12, wherein selecting the target maximum to minimumcapacitance range for the frequency control component comprisesselecting the target effective capacitance range to be larger than acapacitance range of the two or more varactors.
 14. The method of claim13, wherein selecting the magnitude of the inductance of the at leastone inductor comprises selecting magnitudes of inductance of the firstinductor and the second inductor such that the frequency controlcomponent has the target effective capacitance range larger than thecapacitance range of the two or more varactors.
 15. The method of claim14, wherein selecting the magnitudes of inductance of the first inductorand the second inductor is based on quality factors of the firstvaractor and the second varactor, respectively.
 16. The method of claim15, further comprising providing a plurality of negative resistanceelements in the frequency control component within respective distancesof respective ones of the two or more varactors.
 17. The method of claim1, further comprising providing the frequency control component in atleast one of a voltage controlled oscillator, a filter and areconfigurable radio system.
 18. The method of claim 1, wherein thefrequency control component controls an oscillation frequency.
 19. Themethod of claim 18, wherein the oscillation frequency has a tuning rangegreater than one octave natively.
 20. The method of claim 18, whereinthe tuning range extends between 10.5 GHz and 24 GHz.